2N6660
1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD

From Semelab Plc.

Status ACTIVE
Case Connection DRAIN
Channel Type N-CHANNEL
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 1 A
Drain-source On Resistance-Max 3 ohm
DS Breakdown Voltage-Min 60 V
Feedback Cap-Max (Crss) 10 pF
FET Technology METAL-OXIDE SEMICONDUCTOR
Mfr Package Description HERMETIC SEALED, METAL, TO-39, 3 PIN
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Terminal Finish NOT SPECIFIED
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Transistor Type GENERAL PURPOSE SMALL SIGNAL

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