2N6660C4A-JQRS.GCDM
1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

From Semelab Plc.

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min60 V
Drain Current-Max (ID)1 A
Drain-source On Resistance-Max3 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)10 pF
Mfr Package DescriptionHERMETIC SEALED PACKAGE-18
Number of Elements1
Number of Terminals18
Operating ModeENHANCEMENT
Package Body MaterialUNSPECIFIED
Package ShapeRECTANGULAR
Package StyleCHIP CARRIER
Power Dissipation Ambient-Max0.7000 W
Surface MountYes
Terminal FormNO LEAD
Terminal PositionQUAD
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE SMALL SIGNAL

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