2N6790
3.5 A, 200 V, 0.92 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

From Semelab Plc.

StatusACTIVE
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min200 V
Drain Current-Max (ID)3.5 A
Drain-source On Resistance-Max0.9200 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionHERMETIC SEALED, TO-39, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialMETAL
Package ShapeROUND
Package StyleCYLINDRICAL
Pulsed Drain Current-Max (IDM)14 A
Terminal FinishNOT SPECIFIED
Terminal FormWIRE
Terminal PositionBOTTOM
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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