2N7085
20 A, 100 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB

From Semelab Plc.

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min100 V
Drain Current-Max (ID)20 A
Drain-source On Resistance-Max0.0750 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialMETAL
Package ShapeSQUARE
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)80 A
Terminal FinishNOT SPECIFIED
Terminal FormPIN/PEG
Terminal PositionSINGLE
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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