IRF340
10 A, 400 V, 0.63 ohm, N-CHANNEL, Si, POWER, MOSFET

From Semelab Plc.

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min400 V
Drain Current-Max (ID)10 A
Drain-source On Resistance-Max0.6300 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialUNSPECIFIED
Package ShapeRECTANGULAR
Package StyleUNCASED CHIP
Surface MountYes
Terminal FinishNOT SPECIFIED
Terminal FormNO LEAD
Terminal PositionUPPER
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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