IRF460-JQR-B
21 A, 500 V, 0.31 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3

From Semelab Plc.

StatusACTIVE
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min500 V
Drain Current-Max (ID)21 A
Drain-source On Resistance-Max0.3100 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT
Package Body MaterialMETAL
Package ShapeROUND
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)84 A
Terminal FinishNOT SPECIFIED
Terminal FormPIN/PEG
Terminal PositionBOTTOM
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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