SMLG110R3
1 A, 100 V, 0.8 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

From Semelab Plc.

StatusACTIVE
Avalanche Energy Rating (Eas)75 mJ
Channel TypeN-CHANNEL
ConfigurationSEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min100 V
Drain Current-Max (ID)1 A
Drain-source On Resistance-Max0.8000 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionHERMETIC SEALED, DIP-14
Number of Elements4
Number of Terminals14
Operating ModeENHANCEMENT
Package Body MaterialUNSPECIFIED
Package ShapeRECTANGULAR
Package StyleIN-LINE
Pulsed Drain Current-Max (IDM)4 A
Terminal FinishTIN
Terminal FormTHROUGH-HOLE
Terminal PositionDUAL
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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