ST13009
Si NPN Power BJT

From Semiconductor Technology, Inc.

@I(C) (A) (Test Condition)8.0
Absolute Max. Power Diss. (W)100
C(obo) (Max) (F)180p
I(C) Abs.(A) Collector Current12
I(CBO) Max. (A)1.0m
MilitaryN
PackageTO-220AB
V(BR)CEO (V)400
V(CE)sat Max.(V)1.5
f(T) Min. (Hz) Transition Freq4.0M
h(FE) Min. Static Current Gain6.0
t(d) Max. (s) Delay time.100n
t(f) Max. (s) Fall time.700n
t(r) Max. (s) Rise time1.0u
t(s) Max. (s) Storage time.3.0u

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