ST13009 Si NPN Power BJT
From Semiconductor Technology, Inc.
@I(C) (A) (Test Condition) | 8.0 |
Absolute Max. Power Diss. (W) | 100 |
C(obo) (Max) (F) | 180p |
I(C) Abs.(A) Collector Current | 12 |
I(CBO) Max. (A) | 1.0m |
Military | N |
Package | TO-220AB |
V(BR)CEO (V) | 400 |
V(CE)sat Max.(V) | 1.5 |
f(T) Min. (Hz) Transition Freq | 4.0M |
h(FE) Min. Static Current Gain | 6.0 |
t(d) Max. (s) Delay time. | 100n |
t(f) Max. (s) Fall time. | 700n |
t(r) Max. (s) Rise time | 1.0u |
t(s) Max. (s) Storage time. | 3.0u |