2N7000T/R N-Channel Enhancement MOSFET
From Philips Semiconductors / NXP Semiconductors
| @(VDS) (V) (Test Condition) | 40 |
| @I(D) (A) (Test Condition) | 200m |
| @V(DS) (V) (Test Condition) | 10 |
| Absolute Max. Power Diss. (W) | 400m |
| C(iss) Max. (F) | 60p |
| I(D) Abs. Drain Current (A) | 200m |
| I(DSS) Min. (A) | 1.0m |
| I(GSS) Max. (A) | 10n |
| Military | N |
| Package | TO-92var |
| V(BR)DSS (V) | 60 |
| V(BR)GSS (V) | 40 |
| g(fs) Max, (S) Trans. conduct, | 200m |
| g(fs) Min. (S) Trans. conduct. | 100u |
| r(DS)on Max. (Ohms) | 5.0 |
