BC807-16T/R Si PNP Lo-Pwr BJT
From Philips Semiconductors / NXP Semiconductors
| @I(B) (A) (Test Condition) | 50m |
| @I(C) (A) (Test Condition) | 100m |
| @V(CBO) (V) (Test Condition) | 20 |
| @V(CE) (V) (Test Condition) | 1.0 |
| Absolute Max. Power Diss. (W) | 350m |
| I(C) Abs.(A) Collector Current | 1.2 |
| I(CBO) Max. (A) | 100n |
| Military | N |
| Package | SOT-23 |
| V(BR)CBO (V) | 50 |
| V(BR)CEO (V) | 45 |
| V(CE)sat Max.(V) | .7 |
| h(FE) Max. Current gain. | 250 |
| h(FE) Min. Static Current Gain | 100 |
