BCV27T/R
NPN Darlington Transistor

From Philips Semiconductors / NXP Semiconductors

Absolute Max. Power Diss. (W) 250m
f(T) Min. (Hz) Transition Freq 220M
h(FE) Min. Static Current Gain 20k
@I(B) (A) (Test Condition) .1
I(C) Abs.(A) Collector Current 300m
@I(C) (A) (Test Condition) 100m
I(CBO) Max. (A) 100n
Military N
Package SOT-23
Semiconductor Material Silicon
V(BR)CBO (V) 40
V(BR)CEO (V) 30
@V(CBO) (V) (Test Condition) 30
V(CE)sat Max.(V) 1.0
@V(CE) (V) (Test Condition) 5

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