BCV49T/R
NPN Darlington Transistor

From Philips Semiconductors / NXP Semiconductors

@I(B) (A) (Test Condition).1m
@I(C) (A) (Test Condition)100m
@V(CBO) (V) (Test Condition)60
@V(CE) (V) (Test Condition)5
Absolute Max. Power Diss. (W)1.0
I(C) Abs.(A) Collector Current500m
I(CBO) Max. (A)100n
MilitaryN
PackageSOT-89
Semiconductor MaterialSilicon
V(BR)CBO (V)80
V(BR)CEO (V)60
V(CE)sat Max.(V)1.0
f(T) Min. (Hz) Transition Freq220M
h(FE) Min. Static Current Gain2.0k

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