BF998RT/R
N-Channel, Dual-Gate Tetrode MOSFET

From Philips Semiconductors / NXP Semiconductors

@(VDS) (V) (Test Condition)20
@Freq. (Hz) (Test Condition)1M
@I(D) (A) (Test Condition)10m
@Temp (°C) (Test Condition)25
@V(DS) (V) (Test Condition)8
@V(GS) (V) (Test Condition)5
Absolute Max. Power Diss. (W)200m
C(iss) Max. (F)2.5p
I(D) Abs. Drain Current (A)30m
I(DSS) Max. (A)18m
I(DSS) Min. (A)2m
I(GSS) Max. (A)50n
PackageSOT-143R
Thermal Resistance Junc-Amb.500
V(BR)DSS (V)12
V(BR)GSS (V)20
g(fs) Max, (S) Trans. conduct,24m
g(fs) Min. (S) Trans. conduct.21m

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