BF998T/R N-Channel, Dual-Gate Tetrode MOSFET
From Philips Semiconductors / NXP Semiconductors
| @(VDS) (V) (Test Condition) | 20 |
| @Freq. (Hz) (Test Condition) | 1M |
| @I(D) (A) (Test Condition) | 10m |
| @Temp (°C) (Test Condition) | 25 |
| @V(DS) (V) (Test Condition) | 8 |
| @V(GS) (V) (Test Condition) | 5 |
| Absolute Max. Power Diss. (W) | 200m |
| C(iss) Max. (F) | 1.05p |
| I(D) Abs. Drain Current (A) | 30m |
| I(DSS) Max. (A) | 18m |
| I(DSS) Min. (A) | 2m |
| I(GSS) Max. (A) | 50n |
| Package | SOT-143 |
| Thermal Resistance Junc-Amb. | 460 |
| V(BR)DSS (V) | 12 |
| V(BR)GSS (V) | 20 |
| g(fs) Max, (S) Trans. conduct, | 24m |
| g(fs) Min. (S) Trans. conduct. | 21m |
