BFQ67WT/R
Bipolar NPN UHF-Microwave Transisitor

From Philips Semiconductors / NXP Semiconductors

@Freq. (Hz) (Test Condition)1M
@I(C) (A) (Test Condition)15m
@V(CBO) (V) (Test Condition)5
@V(CE) (V) (Test Condition)8.0
Absolute Max. Power Diss. (W)300m
C(obo) (Max) (F)0.7p
I(C) Abs.(A) Collector Current50m
I(CBO) Max. (A)50n
MilitaryN
Noise Figure Max. (dB)3
PackageSOT-323
Power Gain Min. (dB)8
Semiconductor MaterialSilicon
V(BR)CBO (V)20
V(BR)CEO (V)10
f(T) Min. (Hz) Transition Freq8G
h(FE) Max. Current gain.100
h(FE) Min. Static Current Gain60

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