BS108AMO N-Channel Enhancement MOSFET
From Philips Semiconductors / NXP Semiconductors
| @(VDS) (V) (Test Condition) | 20 |
| @Freq. (Hz) (Test Condition) | 1.0M |
| @I(D) (A) (Test Condition) | 300m |
| @Temp (°C) (Test Condition) | 25 |
| @V(DS) (V) (Test Condition) | 25 |
| @V(GS) (V) (Test Condition) | 2.8 |
| Absolute Max. Power Diss. (W) | 350m |
| C(iss) Max. (F) | 150p |
| I(D) Abs. Drain Current (A) | 250m |
| I(DM) Max (A)(@25°C) | 500m |
| I(DSS) Max. (A) | 30n |
| I(GSS) Max. (A) | 10n |
| Military | N |
| Package | TO-92var |
| Thermal Resistance Junc-Amb. | 125 |
| V(BR)DSS (V) | 200 |
| V(BR)GSS (V) | 20 |
| V(GS)th Max. (V) | 1.5 |
| V(GS)th Min. (V) | .5 |
| g(fs) Max, (S) Trans. conduct, | 400m |
| g(fs) Min. (S) Trans. conduct. | 200m |
| r(DS)on Max. (Ohms) | 8.0 |
