BSR14T/R
Si NPN LP HF BJT

From Philips Semiconductors / NXP Semiconductors

@I(C) (A) (Test Condition)500m
@V(CBO) (V) (Test Condition)60
@V(CE) (V) (Test Condition)10
Absolute Max. Power Diss. (W)310m
C(obo) (Max) (F)8.0p
I(C) Abs.(A) Collector Current800m
I(CBO) Max. (A)10n
MilitaryN
PackageSOT-23
V(BR)CBO (V)75
V(BR)CEO (V)40
V(CE)sat Max.(V)1.0
f(T) Min. (Hz) Transition Freq300M
h(FE) Max. Current gain.300
h(FE) Min. Static Current Gain100
t(off) Max. (s) Turn-Off Time285n

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