BSR15T/R
Si PNP LP HF BJT

From Philips Semiconductors / NXP Semiconductors

@I(C) (A) (Test Condition)500m
@V(CBO) (V) (Test Condition)50
@V(CE) (V) (Test Condition)10
Absolute Max. Power Diss. (W)310m
C(obo) (Max) (F)8.0p
I(C) Abs.(A) Collector Current600m
I(CBO) Max. (A)20n
MilitaryN
PackageSOT-23
V(BR)CBO (V)60
V(BR)CEO (V)40
V(CE)sat Max.(V)1.6
f(T) Min. (Hz) Transition Freq200M
h(FE) Max. Current gain.300
h(FE) Min. Static Current Gain100
t(d) Max. (s) Delay time.10n
t(f) Max. (s) Fall time.60n
t(off) Max. (s) Turn-Off Time100n
t(r) Max. (s) Rise time40n
t(s) Max. (s) Storage time.160n

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