PHN210T/R
Matched Pair of N-Channel Enhancement MOSFETs

From Philips Semiconductors / NXP Semiconductors

@I(D) (A) (Test Condition)2.2
@Temp (°C) (Test Condition)25
@V(DS) (V) (Test Condition)20
@V(GS) (V) (Test Condition)10
Absolute Max. Power Diss. (W)2
I(D) Abs. Drain Current (A)3.5
I(DSS) Max. (A)100n
I(GSS) Max. (A)100n
PackageSO
Thermal Resistance Junc-Amb.35
V(BR)DSS (V)30
V(BR)GSS (V)20
V(GS)th Max. (V)2.8
V(GS)th Min. (V)1
g(fs) Max, (S) Trans. conduct,4.5
g(fs) Min. (S) Trans. conduct.2
r(DS)on Max. (Ohms).1

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