PMBT2907AT/R
Si PNP LP HF BJT

From Philips Semiconductors / NXP Semiconductors

@Freq. (Hz) (Test Condition)1M
@I(B) (A) (Test Condition)50m
@I(C) (A) (Test Condition)500m
@V(CB) (V) (Test Condition)10
@V(CBO) (V) (Test Condition)50
@V(CE) (V) (Test Condition)20
Absolute Max. Power Diss. (W)250m
C(obo) (Max) (F)8.0p
I(C) Abs.(A) Collector Current600m
I(CBO) Max. (A)10n
MilitaryN
PackageSOT-23
V(BR)CBO (V)60
V(BR)CEO (V)60
V(CE)sat Max.(V)1.6
f(T) Min. (Hz) Transition Freq200M
h(FE) Min. Static Current Gain50
t(d) Max. (s) Delay time.10n
t(f) Max. (s) Fall time.30n
t(off) Max. (s) Turn-Off Time100n
t(on) Max. (s) Turn-On Time45n
t(r) Max. (s) Rise time40n
t(s) Max. (s) Storage time.80n

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