SHD230209
3.5 A, 100 V, 0.6 ohm, 4 CHANNEL, P-CHANNEL, Si, POWER, MOSFET

From Sensitron Semiconductor

StatusACTIVE
Channel TypeP-CHANNEL
ConfigurationSEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min100 V
Drain Current-Max (ID)3.5 A
Drain-source On Resistance-Max0.6000 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionHERMETIC SEALED, LCC-28
Number of Elements4
Number of Terminals28
Operating ModeENHANCEMENT
Package Body MaterialUNSPECIFIED
Package ShapeSQUARE
Package StyleCHIP CARRIER
Pulsed Drain Current-Max (IDM)10 A
Surface MountYes
Terminal FinishNOT SPECIFIED
Terminal FormNO LEAD
Terminal PositionQUAD
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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