SHDC226309
9.3 A, 100 V, 0.36 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA

From Sensitron Semiconductor

StatusACTIVE
Channel TypeP-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min100 V
Drain Current-Max (ID)9.3 A
Drain-source On Resistance-Max0.3600 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionHERMETIC SEALED, TO-257, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialUNSPECIFIED
Package ShapeSQUARE
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)58 A
Terminal FinishNOT SPECIFIED
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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