SI4425BDY-T1-E3 P-CHANNEL 30-V (D-S) MOSFET
From Siliconix / Vishay
Category | Power MOSFET |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Quad Drain, Triple Source |
Dimensions | 5 x 4 x 1.55 mm |
Forward Diode Voltage | -1.2 V |
Forward Transconductance | 29 S |
Height | 1.55 mm |
Length | 5 mm |
Maximum Continuous Drain Current | -7 A |
Maximum Drain Source Resistance | 0.019 Ω |
Maximum Drain Source Voltage | -30 V |
Maximum Gate Source Voltage | ±20 V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 1.5 W |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Operating Temperature Range | -55 to +150 °C |
Package Type | SO-8 |
Pin Count | 8 |
Typical Gate Charge @ Vgs | 64 nC @ -10 V |
Typical Turn On Delay Time | 15 ns |
Typical TurnOff Delay Time | 100 ns |
Width | 4 mm |