SI4848DY-T1-E3 MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 0.068Ohm; ID 2.7A; SO-8; PD 1.5W; VGS +/-20V
From Siliconix / Vishay
Category | Power MOSFET |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Quad Drain, Triple Source |
Dimensions | 5 x 4 x 1.55 mm |
Forward Diode Voltage | 1.2 V |
Forward Transconductance | 15 S |
Height | 1.55 mm |
Length | 5 mm |
Maximum Continuous Drain Current | 3.7 A |
Maximum Drain Source Resistance | 0.095 Ω |
Maximum Drain Source Voltage | 150 V |
Maximum Gate Source Voltage | ±20 V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 1.5 W |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Operating Temperature Range | -55 to +150 °C |
Package Type | SO-8 |
Pin Count | 8 |
Typical Gate Charge @ Vgs | 17 nC @75 V |
Typical Turn On Delay Time | 9 ns |
Typical TurnOff Delay Time | 24 ns |
Width | 4 mm |