SI4888DY-T1-E3
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0058Ohm; ID 11A; SO-8; PD 1.6W; VGS +/-20V; -55

From Siliconix / Vishay

CategoryPower MOSFET
Channel ModeEnhancement
Channel TypeN
ConfigurationQuad Drain, Triple Source
Dimensions5 x 4 x 1.55 mm
Forward Diode Voltage1.1 V
Forward Transconductance38 S
Height1.55 mm
Length5 mm
Maximum Continuous Drain Current11 A
Maximum Drain Source Resistance0.01 Ω
Maximum Drain Source Voltage30 V
Maximum Gate Source Voltage±20 V
Maximum Operating Temperature+150 °C
Maximum Power Dissipation1.6 W
Minimum Operating Temperature-55 °C
Mounting TypeSurface Mount
Number of Elements per Chip1
Operating Temperature Range-55 to +150 °C
Package TypeSO-8
Pin Count8
Typical Gate Charge @ Vgs16.3 nC @ 15 V
Typical Turn On Delay Time14 ns
Typical TurnOff Delay Time44 ns
Width4 mm

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