SI4888DY-T1-E3 MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0058Ohm; ID 11A; SO-8; PD 1.6W; VGS +/-20V; -55
From Siliconix / Vishay
Category | Power MOSFET |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Quad Drain, Triple Source |
Dimensions | 5 x 4 x 1.55 mm |
Forward Diode Voltage | 1.1 V |
Forward Transconductance | 38 S |
Height | 1.55 mm |
Length | 5 mm |
Maximum Continuous Drain Current | 11 A |
Maximum Drain Source Resistance | 0.01 Ω |
Maximum Drain Source Voltage | 30 V |
Maximum Gate Source Voltage | ±20 V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 1.6 W |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Operating Temperature Range | -55 to +150 °C |
Package Type | SO-8 |
Pin Count | 8 |
Typical Gate Charge @ Vgs | 16.3 nC @ 15 V |
Typical Turn On Delay Time | 14 ns |
Typical TurnOff Delay Time | 44 ns |
Width | 4 mm |