SI4920DY-T1-E3 MOSFET; Dual N-Channel, 30V (D-S
From Siliconix / Vishay
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual Gate, Dual Source, Quad Drain |
| Dimensions | 5 x 4 x 1.55 mm |
| Forward Diode Voltage | 1.2 V |
| Forward Transconductance | 25 S |
| Height | 1.55 mm |
| Length | 5 mm |
| Maximum Continuous Drain Current | ±6.9 A |
| Maximum Drain Source Resistance | 0.035 Ω |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 2 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | SO-8 |
| Pin Count | 8 |
| Typical Gate Charge @ Vgs | 15 nC @ 5 V |
| Typical Turn On Delay Time | 12 ns |
| Typical TurnOff Delay Time | 60 ns |
| Width | 4 mm |
