SI5441BDC-T1-E3 MOSFET, Power; P-Ch; VDSS -20V; RDS(ON) 0.036Ohm; ID -4.4A; 1206-8 ChipFET; PD 1.3W
From Siliconix / Vishay
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Hex Drain |
| Dimensions | 3.1 x 1.7 x 1.1 mm |
| Forward Diode Voltage | -1.2 V |
| Forward Transconductance | 12 S |
| Height | 1.1 mm |
| Length | 3.1 mm |
| Maximum Continuous Drain Current | -3.2 A |
| Maximum Drain Source Resistance | 0.036 Ω |
| Maximum Drain Source Voltage | -20 V |
| Maximum Gate Source Voltage | ±12 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.3 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | 1206-8 ChipFET |
| Pin Count | 8 |
| Typical Gate Charge @ Vgs | 11.5 nC @ -10 V |
| Typical Turn On Delay Time | 15 ns |
| Typical TurnOff Delay Time | 50 ns |
| Width | 1.7 mm |
