BUZ80A
3.8 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

From STMicroelectronics, Inc.

StatusACTIVE
Avalanche Energy Rating (Eas)200 mJ
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min800 V
Drain Current-Max (ID)3.8 A
Drain-source On Resistance-Max3 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionTO-220, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)15 A
Terminal FinishMATTE TIN
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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