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IRF532FI
N-Channel Enhancement MOSFET

From STMicroelectronics

Absolute Max. Power Diss. (W) 35
C(iss) Max. (F) 850p
g(fs) Min. (S) Trans. conduct. 5.1
I(D) Abs. Drain Current (A) 8.0
@I(D) (A) (Test Condition) 8.3
I(DSS) Min. (A) 1.0m
I(GSS) Max. (A) 100n
Military N
Package TO-220AB
r(DS)on Max. (Ohms) 230m
t(f) Max. (s) Fall time. 45n
t(r) Max. (s) Rise time 75n
V(BR)DSS (V) 100
V(BR)GSS (V) 20
@(VDS) (V) (Test Condition) 20

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