IRF541FI
N-Channel Enhancement MOSFET

From STMicroelectronics

@(VDS) (V) (Test Condition)20
@I(D) (A) (Test Condition)17
Absolute Max. Power Diss. (W)40
C(iss) Max. (F)1.6n
I(D) Abs. Drain Current (A)15
I(DSS) Min. (A)1.0m
I(GSS) Max. (A)100n
MilitaryN
PackageTO-220AB
V(BR)DSS (V)80
V(BR)GSS (V)20
g(fs) Min. (S) Trans. conduct.8.7
r(DS)on Max. (Ohms)77m
t(f) Max. (s) Fall time.30n
t(r) Max. (s) Rise time60n

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