STAP1011-180
L BAND, Si, N-CHANNEL, RF POWER, MOSFET

From STMicroelectronics, Inc.

StatusACTIVE
Case ConnectionSOURCE
Channel TypeN-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min65 V
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Highest Frequency BandL BAND
Lead FreeYes
Mfr Package DescriptionROHS COMPLIANT, PLASTIC PACKAGE-4
Number of Elements1
Number of Terminals4
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Surface MountYes
Terminal FinishNOT SPECIFIED
Terminal FormFLAT
Terminal PositionDUAL
Transistor Element MaterialSILICON
Transistor TypeRF POWER

External links