STB18NM60NTRL 13 A, 600 V, 0.285 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
From STMicroelectronics, Inc.
Status | EOL/LIFEBUY |
Avalanche Energy Rating (Eas) | 350 mJ |
Channel Type | N-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 600 V |
Drain Current-Max (ID) | 13 A |
Drain-source On Resistance-Max | 0.2850 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | ROHS COMPLIANT, TO-263, D2PAK-3 |
Number of Elements | 1 |
Number of Terminals | 2 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Pulsed Drain Current-Max (IDM) | 52 A |
Surface Mount | Yes |
Terminal Form | GULL WING |
Terminal Position | SINGLE |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |