STD4N25-1 4 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
From STMicroelectronics, Inc.
Status | ACTIVE |
Avalanche Energy Rating (Eas) | 20 mJ |
Case Connection | DRAIN |
Channel Type | N-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 250 V |
Drain Current-Max (ID) | 4 A |
Drain-source On Resistance-Max | 1.1 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | IPAK-3 |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | IN-LINE |
Pulsed Drain Current-Max (IDM) | 16 A |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |