2N6660-G
410 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39

From Supertex, Inc.

StatusACTIVE
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min60 V
Drain Current-Max (ID)0.4100 A
Drain-source On Resistance-Max3 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)10 pF
Lead FreeYes
Mfr Package DescriptionGREEN PACKAGE-3
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialMETAL
Package ShapeROUND
Package StyleCYLINDRICAL
Terminal FinishMATTE TIN
Terminal FormWIRE
Terminal PositionBOTTOM
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE SMALL SIGNAL

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