VN2222N6 900 mA, 220 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From Supertex, Inc.
| Status | Active |
| Configuration | COMMON SOURCE, 4 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 220 V |
| Drain Current-Max (ID) | 0.9000 A |
| Drain-source On Resistance-Max | 7.5 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 35 pF |
| JESD-30 Code | R-CDIP-T20 |
| JESD-609 Code | e0 |
| Mfr Package Description | CERAMIC, DIP-20 |
| Moisture Sensitivity Level | NOT SPECIFIED |
| Number of Elements | 4 |
| Number of Terminals | 20 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Qualification Status | COMMERCIAL |
| REACH Compliant | Yes |
| Surface Mount | NO |
| Terminal Finish | TIN LEAD |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
