{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"363 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.7500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"40 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR"...

{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"364 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.05 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"40 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"600 V",...

{"Rad Hardened":"No"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Power Dissipation":"45(W)","Continuous Drain Current":"10(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Res":"0.75(ohm)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-220SIS","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1","Drain-Source On-Volt":"600(V)"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd30 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"10 A","Mounting":"Through Hole","Drain-Source On-Volt":"600 V","Pin Count":"3 +Tab","Power Dissipation":"45 W","Operating Temp Range":"-55C to 150C","Package Type":"TO-220SIS","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"0.75 ohm","Number of Elements":"1"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"600 V","Typical Rise Time":"22 ns","Description":"Value","Maximum Continuous Drain Current":"10 A","Package":"3TO-220SIS","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b130 V","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"750@10V mOhm","Manufacturer":"Toshiba","Typical Fall Time":"15 ns"}...

{"Factory Pack Quantity":"2500","Vds - Drain-Source Breakdown Voltage":"600 V","Transistor Polarity":"N-Channel","Qg - Gate Charge":"25 nC","Mounting Style":"Through Hole","Brand":"Toshiba","Id - Continuous Drain Current":"10 A","Vgs th - Gate-Source Threshold Voltage":"4 V","Pd - Power Dissipation":"45 W","Packaging":"Reel","Product Category":"MOSFET","Fall Time":"100 ns","Rds On - Drain-Source Resistance":"750 mOhms","Package \/ Case":"TO-220-3","Typical Turn-Off Delay Time":"15 ns","Configuration":"Singl...

{"Category":"MOSFET","Maximum Drain Source Voltage":"600 V","Typical Rise Time":"22 ns","Description":"Value","Maximum Continuous Drain Current":"10 A","Package":"3TO-220SIS","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b130 V","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"750@10V mOhm","Manufacturer":"Toshiba","Typical Fall Time":"15 ns"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b130(V)","Channel Mode":"Enhancement","Power Dissipation":"45(W)","Continuous Drain Current":"10(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"600(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-220SIS","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-220-3 Full Pack","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 1mA","Series":"-","Standard Package":"50","Supplier Device Package":"TO-220SIS","Catalog Drawings":"TK Series Side 3 TK Series Side 2 TK Series TO-220F Side 1","Datasheets":"TK10A60D - Mosfets Prod Guide","Rds On (Max) @ Id, Vgs":"750 mOhm @ 5A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"45W","Package \/ Case":...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 1mA","Catalog Drawings":"TK Series Side 3 TK Series Side 2 TK Series TO-220F Side 1","Package \/ Case":"TO-220-3 Full Pack","Current - Continuous Drain (Id) @ 25\u00b0C":"10A (Ta)","Gate Charge (Qg) @ Vgs":"25nC @ 10V","Product Photos":"TO-220-3 Full Pack","Rds On (Max) @ Id, Vgs":"750 mOhm @ 5A, 10V","Datasheets":"TK10A60D - Mosfets Prod Guide","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"2,5...