BC337-16 A1 Bipolar Transistors - BJT NPN Transistor
From Taiwan Semiconductor
Brand | Taiwan Semiconductor |
Collector- Base Voltage VCBO | 50 V |
Collector- Emitter Voltage VCEO Max | 45 V |
Collector-Emitter Saturation Voltage | 0.7 V |
Configuration | Single |
DC Collector/Base Gain hfe Min | 160 at 100 mA at 5 V |
DC Current Gain hFE Max | 400 at 100 mA at 5 V |
Emitter- Base Voltage VEBO | 5 V |
Factory Pack Quantity | 4000 |
Gain Bandwidth Product fT | 100 MHz |
Manufacturer | Taiwan Semiconductor |
Maximum DC Collector Current | 1 A |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Mounting Style | Through Hole |
Package / Case | TO-92-3 |
Packaging | Ammo Pack |
Pd - Power Dissipation | 625 mW |
Product Category | Bipolar Transistors - BJT |
Transistor Polarity | NPN |