BC807-16
Bipolar Transistors - BJT Transistor 300mW

From Taiwan Semiconductor

BrandTaiwan Semiconductor
Collector- Base Voltage VCBO- 50 V
Collector- Emitter Voltage VCEO Max- 45 V
Collector-Emitter Saturation Voltage- 0.7 V
ConfigurationSingle
DC Collector/Base Gain hfe Min100 at - 100 mA at - 1 V
DC Current Gain hFE Max250 at - 100 mA at -1 V
Emitter- Base Voltage VEBO- 5 V
Factory Pack Quantity3000
Gain Bandwidth Product fT80 MHz
ManufacturerTaiwan Semiconductor
Maximum DC Collector Current- 0.5 A
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
PackagingReel
Part # AliasesBC807-16 RFG
Pd - Power Dissipation0.3 W
Product CategoryBipolar Transistors - BJT
RoHSDetails
Transistor PolarityPNP

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