BC807-16 Bipolar Transistors - BJT Transistor 300mW
From Taiwan Semiconductor
Brand | Taiwan Semiconductor |
Collector- Base Voltage VCBO | - 50 V |
Collector- Emitter Voltage VCEO Max | - 45 V |
Collector-Emitter Saturation Voltage | - 0.7 V |
Configuration | Single |
DC Collector/Base Gain hfe Min | 100 at - 100 mA at - 1 V |
DC Current Gain hFE Max | 250 at - 100 mA at -1 V |
Emitter- Base Voltage VEBO | - 5 V |
Factory Pack Quantity | 3000 |
Gain Bandwidth Product fT | 80 MHz |
Manufacturer | Taiwan Semiconductor |
Maximum DC Collector Current | - 0.5 A |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 |
Packaging | Reel |
Part # Aliases | BC807-16 RFG |
Pd - Power Dissipation | 0.3 W |
Product Category | Bipolar Transistors - BJT |
RoHS | Details |
Transistor Polarity | PNP |