GP1607D
Silicon Center-Tapped Doubler

From Taiwan Semiconductor

@I(FM) (A) (Test Condition)8.0
@Temp (°C) (Test Condition)100
@Temp. (°C) (Test Condition)25
@V(R) (V)(Test Condition)1.0k
@t(w) (s) (Test Condition)8.3m
I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150
I(O) Max.(A) Output Current16
I(RM) Max.(A) Pk. Rev. Current250u
I(RM) Max.(A) Reverse Current10u
PackageTO-220AB
V(FM) Max.(V) Forward Voltage1.1
V(RRM)(V) Rep.Pk.Rev. Voltage1.0k

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