TSM2N7000KCTA3
300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92

From Taiwan Semiconductor Co., Ltd.

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min60 V
Drain Current-Max (ID)0.3000 A
Drain-source On Resistance-Max5.5 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionROHS COMPLIANT PACKAGE-3
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeROUND
Package StyleCYLINDRICAL
Power Dissipation Ambient-Max0.4000 W
Terminal FormTHROUGH-HOLE
Terminal PositionBOTTOM
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE SMALL SIGNAL

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