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TSM2N7000KCTA3
300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92

From Taiwan Semiconductor Co., Ltd.

Status ACTIVE
Channel Type N-CHANNEL
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 0.3000 A
Drain-source On Resistance-Max 5.5 ohm
DS Breakdown Voltage-Min 60 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Mfr Package Description ROHS COMPLIANT PACKAGE-3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style CYLINDRICAL
Power Dissipation Ambient-Max 0.4000 W
Terminal Form THROUGH-HOLE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Transistor Type GENERAL PURPOSE SMALL SIGNAL

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