CSD16323Q3C MOSFET N-CH 25V 60A 8SON
From Texas Instruments
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 60A (Tc) |
| Datasheets | CSD16323Q3C |
| Design Resources | Create your power design now with TI’s WEBENCH® Designer |
| Drain to Source Voltage (Vdss) | 25V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 8.4nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 1300pF @ 12.5V |
| Manufacturer Product Page | CSD16323Q3C Specifications |
| Mounting Type | Surface Mount |
| Online Catalog | N-Channel Logic Level Gate FETs |
| Other Names | 296-28096-6 |
| PCN Design/Specification | Qualification Revision A 01/Jul/2014 |
| Package / Case | 8-TDFN Exposed Pad |
| Packaging | Digi-Reel® |
| Power - Max | 3W |
| Product Photos | 8-Power TDFN Exposed Pad |
| Product Training Modules | NexFET MOSFET Technology |
| Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 24A, 8V |
| Series | NexFET™ |
| Standard Package | 1 |
| Supplier Device Package | 8-SON Exposed Pad (3x3) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Video File | PowerStack™ Packaging Technology Overview |
