CSD16406Q3 MOSFET N-CH 25V 60A 8-SON
From Texas Instruments
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 60A (Tc) |
| Datasheets | CSD16406Q3 |
| Design Resources | Create your power design now with TI’s WEBENCH® Designer |
| Drain to Source Voltage (Vdss) | 25V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 8.1nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 1100pF @ 12.5V |
| Manufacturer Product Page | CSD16406Q3 Specifications |
| Mounting Type | Surface Mount |
| Online Catalog | N-Channel Logic Level Gate FETs |
| Other Names | 296-24251-6 |
| PCN Assembly/Origin | Qualification Assembly/Test Site 03/Mar/2014 Qualification Wire Bond 27/May/2014 Assembly/Test Site Revision C 09/Feb/2015 |
| PCN Design/Specification | Qualification Revision A 01/Jul/2014 |
| Package / Case | 8-TDFN Exposed Pad |
| Packaging | Digi-Reel® |
| Power - Max | 2.7W |
| Product Photos | 8-Power TDFN |
| Product Training Modules | NexFET MOSFET Technology |
| Rds On (Max) @ Id, Vgs | 5.3 mOhm @ 20A, 10V |
| Series | NexFET™ |
| Standard Package | 1 |
| Supplier Device Package | 8-SON |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Video File | NexFET Power Block PowerStack™ Packaging Technology Overview |
