CSD17313Q2Q1 MOSFET N-CH 30V 5A 6SON
From Texas Instruments
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Datasheets | CSD17313Q2Q1 |
| Design Resources | Create your power design now with TI’s WEBENCH® Designer |
| Drain to Source Voltage (Vdss) | 30V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 2.7nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 340pF @ 15V |
| Manufacturer Product Page | CSD17313Q2Q1 Specifications |
| Mounting Type | Surface Mount |
| Online Catalog | N-Channel Logic Level Gate FETs |
| Other Names | 296-35548-6 |
| PCN Design/Specification | Marking Standardization 29/Jan/2015 |
| Package / Case | 6-WDFN Exposed Pad |
| Packaging | Digi-Reel® |
| Power - Max | 2.3W |
| Product Photos | CSD-6-SON Pkg |
| Rds On (Max) @ Id, Vgs | 30 mOhm @ 4A, 8V |
| Series | Automotive, AEC-Q100, NexFET™ |
| Standard Package | 1 |
| Supplier Device Package | 6-SON (2x2) |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
