2SA1020-Y(TE6,F,M) Bipolar Transistors - BJT PNP -50V -2A 900mW
From Toshiba
Brand | Toshiba |
Collector- Base Voltage VCBO | - 50 V |
Collector- Emitter Voltage VCEO Max | - 50 V |
Collector-Emitter Saturation Voltage | - 0.5 V |
Configuration | Single |
DC Collector/Base Gain hfe Min | 70 |
DC Current Gain hFE Max | 240 |
Emitter- Base Voltage VEBO | - 5 V |
Factory Pack Quantity | 3000 |
Gain Bandwidth Product fT | 100 MHz |
Manufacturer | Toshiba |
Maximum DC Collector Current | - 2 A |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | - 55 C |
Mounting Style | Through Hole |
Package / Case | TO-92 MOD |
Packaging | Ammo Pack |
Pd - Power Dissipation | 900 mW |
Product Category | Bipolar Transistors - BJT |
RoHS | Details |
Transistor Polarity | PNP |