2SA1150O Si PNP Lo-Pwr BJT
From Toshiba
| @I(C) (A) (Test Condition) | 100u |
| @V(CE) (V) (Test Condition) | 1.0 |
| Absolute Max. Power Diss. (W) | 300m |
| C(obo) (Max) (F) | 19p |
| I(C) Abs.(A) Collector Current | 800m |
| I(CBO) Max. (A) | 100n |
| Military | N |
| Package | SPAK |
| V(BR)CBO (V) | 35 |
| V(BR)CEO (V) | 30 |
| f(T) Min. (Hz) Transition Freq | 120M |
| h(FE) Max. Current gain. | 200 |
| h(FE) Min. Static Current Gain | 100 |
