2SA1162-Y(TLSPF,T) Bipolar Transistors - BJT SM SIG POWER TRANS
From Toshiba
| Brand | Toshiba |
| Collector- Base Voltage VCBO | - 50 V |
| Collector- Emitter Voltage VCEO Max | - 50 V |
| Configuration | Single |
| DC Collector/Base Gain hfe Min | 70 |
| DC Current Gain hFE Max | 400 |
| Emitter- Base Voltage VEBO | - 5 V |
| Factory Pack Quantity | 3000 |
| Gain Bandwidth Product fT | 80 MHz |
| Manufacturer | Toshiba |
| Maximum DC Collector Current | 0.15 A |
| Maximum Operating Temperature | + 125 C |
| Minimum Operating Temperature | - 55 C |
| Mounting Style | SMD/SMT |
| Package / Case | TO-236 MOD |
| Packaging | Reel |
| Pd - Power Dissipation | 150 mW |
| Product Category | Bipolar Transistors - BJT |
| RoHS | Details |
| Transistor Polarity | PNP |
