2SA1298-Y,LF
Bipolar Transistors - BJT Bias Resistor Built-in transistor

From Toshiba

BrandToshiba
Collector- Base Voltage VCBO- 30 V
Collector- Emitter Voltage VCEO Max- 25 V
Collector-Emitter Saturation Voltage- 0.4 V
DC Collector/Base Gain hfe Min40
DC Current Gain hFE Max320
Emitter- Base Voltage VEBO- 5 V
Gain Bandwidth Product fT120 MHz
ManufacturerToshiba
Maximum DC Collector Current- 800 mA
Mounting StyleSMD/SMT
Package / CaseTO-236MOD
PackagingReel
Pd - Power Dissipation200 mW
Product CategoryBipolar Transistors - BJT
RoHSDetails
Transistor PolarityPNP

External links