2SA1298-Y,LF Bipolar Transistors - BJT Bias Resistor Built-in transistor
From Toshiba
Brand | Toshiba |
Collector- Base Voltage VCBO | - 30 V |
Collector- Emitter Voltage VCEO Max | - 25 V |
Collector-Emitter Saturation Voltage | - 0.4 V |
DC Collector/Base Gain hfe Min | 40 |
DC Current Gain hFE Max | 320 |
Emitter- Base Voltage VEBO | - 5 V |
Gain Bandwidth Product fT | 120 MHz |
Manufacturer | Toshiba |
Maximum DC Collector Current | - 800 mA |
Mounting Style | SMD/SMT |
Package / Case | TO-236MOD |
Packaging | Reel |
Pd - Power Dissipation | 200 mW |
Product Category | Bipolar Transistors - BJT |
RoHS | Details |
Transistor Polarity | PNP |