2SC5171(Q,M) Bipolar Transistors - BJT NPN 180V 2A Transistor
From Toshiba
Brand | Toshiba |
Collector- Base Voltage VCBO | 180 V |
Collector- Emitter Voltage VCEO Max | 180 V |
Configuration | Single |
DC Collector/Base Gain hfe Min | 100 |
Emitter- Base Voltage VEBO | 5 V |
Factory Pack Quantity | 50 |
Gain Bandwidth Product fT | 200 MHz |
Manufacturer | Toshiba |
Maximum DC Collector Current | 2 A |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Mounting Style | Through Hole |
Package / Case | TO-220-3 FP |
Packaging | Tube |
Pd - Power Dissipation | 20000 mW |
Product Category | Bipolar Transistors - BJT |
RoHS | Details |
Transistor Polarity | NPN |