2SC5200N(S1,E,S)
Bipolar Transistors - BJT POWER TRANSISTOR PC=150W; F=30MHZ

From Toshiba

BrandToshiba
Collector- Base Voltage VCBO230 V
Collector- Emitter Voltage VCEO Max230 V
Collector-Emitter Saturation Voltage0.4 V
ConfigurationTriple
DC Collector/Base Gain hfe Min35
DC Current Gain hFE Max160
Emitter- Base Voltage VEBO5 V
Gain Bandwidth Product fT30 MHz
ManufacturerToshiba
Maximum DC Collector Current15 A
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Mounting StyleThrough Hole
Package / CaseTO-3P-3
PackagingReel
Pd - Power Dissipation150 W
Product CategoryBipolar Transistors - BJT
RoHSDetails
Transistor PolarityNPN

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