2SC5200N(S1,E,S) Bipolar Transistors - BJT POWER TRANSISTOR PC=150W; F=30MHZ
From Toshiba
Brand | Toshiba |
Collector- Base Voltage VCBO | 230 V |
Collector- Emitter Voltage VCEO Max | 230 V |
Collector-Emitter Saturation Voltage | 0.4 V |
Configuration | Triple |
DC Collector/Base Gain hfe Min | 35 |
DC Current Gain hFE Max | 160 |
Emitter- Base Voltage VEBO | 5 V |
Gain Bandwidth Product fT | 30 MHz |
Manufacturer | Toshiba |
Maximum DC Collector Current | 15 A |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Mounting Style | Through Hole |
Package / Case | TO-3P-3 |
Packaging | Reel |
Pd - Power Dissipation | 150 W |
Product Category | Bipolar Transistors - BJT |
RoHS | Details |
Transistor Polarity | NPN |