2SK2009 200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From Toshiba America Electronic Components, Inc.
| Status | ACTIVE |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
| DS Breakdown Voltage-Min | 30 V |
| Drain Current-Max (ID) | 0.2000 A |
| Drain-source On Resistance-Max | 2 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Mfr Package Description | 2-3F1F, S-MINI, SC-59, TO-236MOD, 3 PIN |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Power Dissipation Ambient-Max | 0.2000 W |
| Surface Mount | Yes |
| Terminal Finish | TIN LEAD |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE SMALL SIGNAL |
